SSM3J01F 2007-11-01 1 toshiba field effect transistor silicon p channel mos type SSM3J01F high speed switching applications ? small package ? low on resistance : ron = 0.4 ? (max) (v gs = ? 4 v) : ron = 0.6 ? (max) (v gs = ? 2.5 v) ? low gate threshold voltage absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds ?30 v gate-source voltage v gss 10 v dc i d ?700 drain current pulse i dp ?1400 ma drain power dissipation (ta = 25c) p d 200 mw channel temperature t ch 150 c storage temperature range t stg ?55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage a nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). marking equivalent circuit handling precaution when handling individual devices (which are not yet mount ing on a circuit board), be sure that the environment is protected against electrostatic electr icity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devi ces should be made of anti-static materials. unit: mm jedec to-236mod jeita sc-59 toshiba 2-3f1f weight: 0.012 g (typ.)
SSM3J01F 2007-11-01 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 10 v, v ds = 0 ? ? 1 a drain-source breakdown voltage v (br) dss i d = ?1 ma, v gs = 0 ?30 ? ? v drain cut-off current i dss v ds = ?30 v, v gs = 0 ? ? ?1 a gate threshold voltage v th v ds = ?3 v, i d = ?0.1 ma ?0.6 ? ? 1.1 v forward transfer admittance ? y fs ? (note) v ds = ?3 v, i d = ?0.35 a 1.0 ? ? s i d = ?0.35 a, v gs = ?4 v ? 0.3 0.4 drain-source on resistance r ds (on ) (note) i d = ?0.35 a, v gs = ?2.5 v ? 0.4 0.6 input capacitance c iss v ds = ?10 v, v gs = 0, f = 1 mhz ? 240 ? pf reverse transfer capacitance c rss v ds = ?10 v, v gs = 0, f = 1 mhz ? 24 ? pf output capacitance c oss v ds = ?10 v, v gs = 0, f = 1 mhz ? 94 ? pf turn-on time t on ? 36 ? switching time turn-off time t off v dd = ?15 v, i d = ?0.3 a, v gs = 0~ ?2.5 v, r g = 4.7 ? 37 ? ns note: pulse test switching time test circuit precaution v th can be expressed as voltage between gate and source when low operat ing current value is i d = ? 100 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consid eration for using the device.
SSM3J01F 2007-11-01 3
SSM3J01F 2007-11-01 4 figure 1 25.4 mm 25.4 mm 1.6 t (a cu pad of 0.8 mm 2 area)
SSM3J01F 2007-11-01 5 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
|
